JANTXV2N4033 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N4033 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/512
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Reference Standard
MIL-19500/512
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
800mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Turn Off Time-Max (toff)
210ns
Turn On Time-Max (ton)
40ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N4033 Product Details
JANTXV2N4033 Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 1A.A maximum collector current of 1A volts can be achieved.
JANTXV2N4033 Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 1V @ 100mA, 1A
JANTXV2N4033 Applications
There are a lot of Microsemi Corporation JANTXV2N4033 applications of single BJT transistors.