JANTXV2N4238 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N4238 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/581
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Reference Standard
MIL-19500/581
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector (Ic) (Max)
1A
Transition Frequency
1MHz
Collector Base Voltage (VCBO)
80V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$49.84980
$4984.98
JANTXV2N4238 Product Details
JANTXV2N4238 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 1MHz.When collector current reaches its maximum, it can reach 1A volts.
JANTXV2N4238 Features
the DC current gain for this device is 30 @ 250mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A a transition frequency of 1MHz
JANTXV2N4238 Applications
There are a lot of Microsemi Corporation JANTXV2N4238 applications of single BJT transistors.