JANTXV2N4399 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N4399 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/433
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 15A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
750mV @ 1A, 10A
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N4399 Product Details
JANTXV2N4399 Overview
In this device, the DC current gain is 15 @ 15A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The maximum collector current is 30A volts.
JANTXV2N4399 Features
the DC current gain for this device is 15 @ 15A 2V the vce saturation(Max) is 750mV @ 1A, 10A
JANTXV2N4399 Applications
There are a lot of Microsemi Corporation JANTXV2N4399 applications of single BJT transistors.