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JANTXV2N5154L

  • JANTXV2N5154L
  • JANTXV2N5154L

JANTXV2N5154L

JANTXV2N5154L

Microsemi Corporation

JANTXV2N5154L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N5154L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/544
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Reference Standard MIL
Qualification Status Qualified
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2.5A 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Current - Collector (Ic) (Max) 2A
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N5154L Product Details

JANTXV2N5154L Overview


In this device, the DC current gain is 70 @ 2.5A 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 5A.In extreme cases, the collector current can be as low as 2A volts.

JANTXV2N5154L Features


the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A

JANTXV2N5154L Applications


There are a lot of Microsemi Corporation JANTXV2N5154L applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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