JANTXV2N5672 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N5672 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/488
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
6W
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 15A 2V
Current - Collector Cutoff (Max)
10mA
Vce Saturation (Max) @ Ib, Ic
5V @ 6A, 30A
Transition Frequency
50MHz
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N5672 Product Details
JANTXV2N5672 Overview
This device has a DC current gain of 20 @ 15A 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 6A, 30A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.In this part, there is a transition frequency of 50MHz.During maximum operation, collector current can be as low as 30A volts.
JANTXV2N5672 Features
the DC current gain for this device is 20 @ 15A 2V the vce saturation(Max) is 5V @ 6A, 30A the emitter base voltage is kept at 7V a transition frequency of 50MHz
JANTXV2N5672 Applications
There are a lot of Microsemi Corporation JANTXV2N5672 applications of single BJT transistors.