JANTXV2N5684 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N5684 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/466
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL-19500/466B
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
300W
Polarity/Channel Type
PNP
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5A 2V
Current - Collector Cutoff (Max)
5μA
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Transition Frequency
2MHz
Collector Base Voltage (VCBO)
80V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
JANTXV2N5684 Product Details
JANTXV2N5684 Overview
In this device, the DC current gain is 30 @ 5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 10A, 50A.As you can see, the part has a transition frequency of 2MHz.Maximum collector currents can be below 50A volts.
JANTXV2N5684 Features
the DC current gain for this device is 30 @ 5A 2V the vce saturation(Max) is 5V @ 10A, 50A a transition frequency of 2MHz
JANTXV2N5684 Applications
There are a lot of Microsemi Corporation JANTXV2N5684 applications of single BJT transistors.