JANTXV2N6788U

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Manufacturer part number:JANTXV2N6788U

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V 4.5A

Case Package:SOT-23

Datasheet:JANTXV2N6788U Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	18-CLCC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/555
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	15
ECCN Code	EAR99
Additional Feature	HIGH RELIABILTY
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	QUAD
Reference Standard	MIL-19500
JESD-30 Code	R-CQCC-N15
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.35Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	100V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant