JANTXV2N6849

new-10%

Manufacturer part number:JANTXV2N6849

Manufacturer:Microsemi Corporation

Description:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39

Case Package:SOT-23

Datasheet:JANTXV2N6849 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Lead, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AF Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/564
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	RADIATION HARDENED
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	MILITARY STANDARD (USA)
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	800mW
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	320m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.5A Tc
Gate Charge (Qg) (Max) @ Vgs	34.8nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6.5A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	Non-RoHS Compliant