JANTXV2N7236

new-10%

Manufacturer part number:JANTXV2N7236

Manufacturer:Microsemi Corporation

Description:MOSFET P-CH 100V 18A

Case Package:SOT-23

Datasheet:JANTXV2N7236 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Lead, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-254-3, TO-254AA (Straight Leads)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/595
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Gold (Au) - with Nickel (Ni) barrier
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	PIN/PEG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	S-CSFM-P3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	4W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4W
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.22Ohm
Pulsed Drain Current-Max (IDM)	72A
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	Non-RoHS Compliant