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MDS150

MDS150

MDS150

Microsemi Corporation

Trans GP BJT NPN 55V 10A 3-Pin Case 55AW Style 1

SOT-23

MDS150 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55AW
Number of Pins 55
Transistor Element Material SILICON
Operating Temperature 200°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 350W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
JESD-30 Code R-PDFM-F3
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 350W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Collector Emitter Breakdown Voltage 60V
Gain 10dB
Frequency - Transition 1.03GHz~1.09GHz
Collector Base Voltage (VCBO) 55V
Highest Frequency Band L B
Radiation Hardening No
RoHS Status RoHS Compliant

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