MDS60L

new-10%

Manufacturer part number:MDS60L

Manufacturer:Microsemi Corporation

Description:Trans GP BJT 65V 4A 3-Pin Case 55AW

Case Package:SOT-23

Datasheet:MDS60L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	55AW
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	200°C TJ
Packaging	Bulk
Published	2015
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Subcategory	Other Transistors
Max Power Dissipation	120W
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	2
JESD-30 Code	R-CDFM-F2
Number of Elements	1
Configuration	SINGLE
Power Dissipation	120W
Case Connection	BASE
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	65V
Max Collector Current	4A
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA 5V
Collector Emitter Breakdown Voltage	65V
Gain	10dB
Frequency - Transition	1.03GHz~1.09GHz
Collector Base Voltage (VCBO)	65V
Emitter Base Voltage (VEBO)	3.5V
Highest Frequency Band	L B
Radiation Hardening	No
RoHS Status	RoHS Compliant