MS1076 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available on our website
SOT-23
MS1076 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
M174
Number of Pins
4
Supplier Device Package
M174
Operating Temperature
200°C TJ
Packaging
Bulk
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
320W
Power - Max
320W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
35V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 7A 5V
Collector Emitter Breakdown Voltage
35V
Gain
12dB
Voltage - Collector Emitter Breakdown (Max)
35V
Current - Collector (Ic) (Max)
16A
Frequency - Transition
30MHz
Collector Base Voltage (VCBO)
70V
Radiation Hardening
No
RoHS Status
RoHS Compliant
MS1076 Product Details
MS1076 Description
MS1076 developed by Microsemi Corporation is a type of 28-volt epitaxial NPN silicon planar transistor. It is specifically designed for SSB and VHF communications. Maximum ruggedness and reliability can be achieved based on an emitter-ballasted die geometry. Using planar structure and technology, very delicate and complex electrode patterns can be produced, thus opening up a broad way for transistors to develop in the direction of high frequency and high power.
