UM6606SM datasheet pdf and Diodes - RF product details from Microsemi Corporation stock available on our website
SOT-23
UM6606SM Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-55°C~175°C TA
Packaging
Bulk
Published
1997
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.10.00.80
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
END
Terminal Form
WRAP AROUND
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-XELF-R2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.5W
Diode Type
PIN - Single
Case Connection
ISOLATED
Application
ATTENUATOR; SWITCHING
Voltage - Peak Reverse (Max)
600V
Breakdown Voltage-Min
600V
Frequency Band
ULTRA HIGH FREQUENCY
Diode Capacitance-Max
0.4pF
Minority Carrier Lifetime-Nom
1 μs
Diode Forward Resistance-Max
2.5Ohm
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
33
$45.70515
$1508.26995
UM6606SM Product Details
UM6606SM Overview
RF diode operates at a maximum reverse voltage of 600V in accordance wRF diodeh the device specifications.Occasionally, this device may run at its lowest possible breakdown voltage of 600V.
UM6606SM Features
at its lowest breakdown voltage of 600V
UM6606SM Applications
There are a lot of Microsemi Corporation UM6606SM applications of RF diodes.
Laptop and desktop PCs
Clamping circuits
RF attenuators and switches
RF detector
Sensor interfaces of security systems
RF voltage doubler
Smart metering
Radar systems for industrial use
UHF mixer
General-purpose Voltage Controlled Attenuators for high linearity applications