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UM6606SM

UM6606SM

UM6606SM

Microsemi Corporation

UM6606SM datasheet pdf and Diodes - RF product details from Microsemi Corporation stock available on our website

SOT-23

UM6606SM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -55°C~175°C TA
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XELF-R2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.5W
Diode Type PIN - Single
Case Connection ISOLATED
Application ATTENUATOR; SWITCHING
Voltage - Peak Reverse (Max) 600V
Breakdown Voltage-Min 600V
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 0.4pF
Minority Carrier Lifetime-Nom 1 μs
Diode Forward Resistance-Max 2.5Ohm
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
33 $45.70515 $1508.26995
UM6606SM Product Details

UM6606SM Overview


RF diode operates at a maximum reverse voltage of 600V in accordance wRF diodeh the device specifications.Occasionally, this device may run at its lowest possible breakdown voltage of 600V.

UM6606SM Features


at its lowest breakdown voltage of 600V

UM6606SM Applications


There are a lot of Microsemi Corporation UM6606SM applications of RF diodes.

  • Laptop and desktop PCs
  • Clamping circuits
  • RF attenuators and switches
  • RF detector
  • Sensor interfaces of security systems
  • RF voltage doubler
  • Smart metering
  • Radar systems for industrial use
  • UHF mixer
  • General-purpose Voltage Controlled Attenuators for high linearity applications

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