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BC807-25LR

  • BC807-25LR
  • BC807-25LR

BC807-25LR

BC807-25LR

Nexperia USA Inc.

BC807-25LR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC807-25LR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2018
Series Automotive, AEC-Q101
Part Status Active
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.270060 $0.27006
10 $0.254773 $2.54773
100 $0.240352 $24.0352
500 $0.226748 $113.374
1000 $0.213913 $213.913
BC807-25LR Product Details

BC807-25LR Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BC807-25LR Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC807-25LR Applications


There are a lot of Nexperia USA Inc. BC807-25LR applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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