BSH202,215

new-10%

Manufacturer part number:BSH202,215

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - BSH202,215 - P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23

Case Package:SOT-23

Datasheet:BSH202,215 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	900mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	417mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	417mW
Turn On Delay Time	2 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 280mA, 10V
Vgs(th) (Max) @ Id	1.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 24V
Current - Continuous Drain (Id) @ 25°C	520mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Rise Time	4.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.5 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-520mA
Threshold Voltage	-1.9V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-30V
Drain Current-Max (Abs) (ID)	0.52A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	-30V
Nominal Vgs	-1.9 V
Height	6.35mm
Length	6.35mm
Width	6.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free