BUK969R3-100E,118

new-10%

Manufacturer part number:BUK969R3-100E,118

Manufacturer:Nexperia USA Inc.

Description:Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:BUK969R3-100E,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	263W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	263W
Case Connection	DRAIN
Turn On Delay Time	39.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	11650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	94.3nC @ 5V
Rise Time	95.1ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±10V
Fall Time (Typ)	93.4 ns
Turn-Off Delay Time	118 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	10V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	405A
Avalanche Energy Rating (Eas)	219 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant