PBHV9540XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9540XF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
Part Status
Active
Pin Count
3
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
65MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.187069
$0.187069
10
$0.176480
$1.7648
100
$0.166491
$16.6491
500
$0.157067
$78.5335
1000
$0.148176
$148.176
PBHV9540XF Product Details
PBHV9540XF Overview
This device has a DC current gain of 140 @ 100mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
PBHV9540XF Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 200mA
PBHV9540XF Applications
There are a lot of Nexperia USA Inc. PBHV9540XF applications of single BJT transistors.