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PBSS4160PANSX

PBSS4160PANSX

PBSS4160PANSX

Nexperia USA Inc.

PBSS4160PANS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

SOT-23

PBSS4160PANSX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 370mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 120mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 175MHz
Max Breakdown Voltage 60V
Frequency - Transition 175MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.437280 $0.43728
10 $0.412528 $4.12528
100 $0.389178 $38.9178
500 $0.367149 $183.5745
1000 $0.346367 $346.367

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