PBSS4230PANP,115

new-10%

Manufacturer part number:PBSS4230PANP,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PBSS4230PANP,115 - Bipolarer Einzeltransistor (BJT), NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE

Case Package:SOT-23

Datasheet:PBSS4230PANP,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	1.45W
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Case Connection	COLLECTOR
Power - Max	510mW
Transistor Application	SWITCHING
Gain Bandwidth Product	95MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	290mV @ 200mA, 2A
Current - Collector (Ic) (Max)	2A
Transition Frequency	120MHz
Collector Emitter Saturation Voltage	-75mV
Frequency - Transition	120MHz
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	7V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant