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PBSS4260PANPSX

PBSS4260PANPSX

PBSS4260PANPSX

Nexperia USA Inc.

NEXPERIA - PBSS4260PANPSX - Bipolar Transistor Array, NPN, PNP, 60 V, 510 mW, 2 A, 50 hFE, SOT-1118

SOT-23

PBSS4260PANPSX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 370mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 2
Polarity NPN, PNP
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 140MHz
Max Breakdown Voltage 60V
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.21744 $0.65232
6,000 $0.20536 $1.23216
15,000 $0.19932 $2.9898

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