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PBSS5350D,125

  • PBSS5350D,125
  • PBSS5350D,125

PBSS5350D,125

PBSS5350D,125

Nexperia USA Inc.

PBSS5350D,125 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5350D,125 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 750mW
Base Part Number PBSS5350
Pin Count 6
Power - Max 750mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.467109 $0.467109
10 $0.440669 $4.40669
100 $0.415725 $41.5725
500 $0.392194 $196.097
1000 $0.369994 $369.994
PBSS5350D,125 Product Details

PBSS5350D,125 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The breakdown input voltage is 50V volts.When collector current reaches its maximum, it can reach 3A volts.

PBSS5350D,125 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A

PBSS5350D,125 Applications


There are a lot of Nexperia USA Inc. PBSS5350D,125 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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