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PDTA123JQAZ

PDTA123JQAZ

PDTA123JQAZ

Nexperia USA Inc.

TRANS PREBIAS PNP 3DFN

SOT-23

PDTA123JQAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Case Connection COLLECTOR
Power - Max 280mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 180MHz
Frequency - Transition 180MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.03800 $0.19

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