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PDTB113ZQAZ

PDTB113ZQAZ

PDTB113ZQAZ

Nexperia USA Inc.

TRANS PREBIAS PNP 3DFN

SOT-23

PDTB113ZQAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 10
Max Power Dissipation 325mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Case Connection COLLECTOR
Power - Max 325mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Frequency - Transition 150MHz
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.537195 $0.537195
10 $0.506788 $5.06788
100 $0.478101 $47.8101
500 $0.451039 $225.5195
1000 $0.425508 $425.508

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