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PDTB123EUF

PDTB123EUF

PDTB123EUF

Nexperia USA Inc.

PDTB123EUF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available on our website

SOT-23

PDTB123EUF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Frequency - Transition 140MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.04420 $0.442

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