PDTD113EQAZ

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PDTD113EQAZ

Manufacturer part number:PDTD113EQAZ

Manufacturer:Nexperia USA Inc.

Description:PDTD113EQAZ datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PDTD113EQAZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	325mW
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Case Connection	COLLECTOR
Power - Max	325mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	100mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	210MHz
Frequency - Transition	210MHz
Resistor - Base (R1)	1 k Ω
Resistor - Emitter Base (R2)	1 k Ω
RoHS Status	ROHS3 Compliant