PMZ250UN,315

new-10%

Manufacturer part number:PMZ250UN,315

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PMZ250UN,315 - MOSFET Transistor, N Channel, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV

Case Package:SOT-23

Datasheet:PMZ250UN,315 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	300MOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	2.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 20V
Current - Continuous Drain (Id) @ 25°C	2.28A Tc
Gate Charge (Qg) (Max) @ Vgs	0.89nC @ 4.5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	18.5 ns
Continuous Drain Current (ID)	2.28A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	4.56A
Height	470μm
Length	1.02mm
Width	620μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free