PQMB11Z

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PQMB11Z

Manufacturer part number:PQMB11Z

Manufacturer:Nexperia USA Inc.

Description:PQMB11Z datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PQMB11Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	230mW
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Case Connection	COLLECTOR
Power - Max	230mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	150mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA 5V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	180MHz
Frequency - Transition	180MHz
Resistor - Base (R1)	10k Ω
Resistor - Emitter Base (R2)	10k Ω
RoHS Status	ROHS3 Compliant