PSMN1R2-25YL,115

new-10%

Manufacturer part number:PSMN1R2-25YL,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PSMN1R2-25YL,115 - MOSFET, N CHANNEL, 25V, 100A, 4-SOT-669

Case Package:SOT-23

Datasheet:PSMN1R2-25YL,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-1023, 4-LFPAK
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	1.2MOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	121W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	121W
Case Connection	DRAIN
Turn On Delay Time	69 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6380pF @ 12V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Rise Time	125ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	56 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	25V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	815A
Avalanche Energy Rating (Eas)	677 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free