PSMN7R8-120PSQ

new-10%

Manufacturer part number:PSMN7R8-120PSQ

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PSMN7R8-120PSQ - MOSFET Transistor, N Channel, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes

Case Package:SOT-23

Datasheet:PSMN7R8-120PSQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	349W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	45.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	9473pF @ 60V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	167nC @ 10V
Rise Time	55.3ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60.8 ns
Turn-Off Delay Time	151.8 ns
Continuous Drain Current (ID)	70A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.0079Ohm
Drain to Source Breakdown Voltage	120V
Pulsed Drain Current-Max (IDM)	280A
RoHS Status	ROHS3 Compliant