BLA0912-250,112

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Manufacturer part number:BLA0912-250,112

Manufacturer:NXP Semiconductors

Description:BLA0912-250,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLA0912-250,112 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Screw
Number of Pins	3
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	75
Maximum Gate Source Voltage (V)	±22
Maximum VSWR	5
Maximum Drain Source Resistance (mOhm)	60(Typ)@9V
Typical Forward Transconductance (S)	9
Maximum Power Dissipation (mW)	700000
Output Power (W)	250(Min)
Typical Power Gain (dB)	13
Maximum Frequency (MHz)	1215
Minimum Frequency (MHz)	960
Typical Fall Time (ns)	6
Typical Rise Time (ns)	25
Typical Drain Efficiency (%)	50
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Supplier Package	SOT-502A
Military	No
Mounting	Screw
Package Height	4.72(Max)
Package Length	34.16(Max)
Package Width	9.91(Max)
PCB changed	3
RoHS	Compliant
Packaging	Bulk
Part Status	Obsolete
Max Operating Temperature	200 °C
Min Operating Temperature	-65 °C
Max Power Dissipation	700 W
Current Rating	45 A
Frequency	960 MHz
Pin Count	3
Number of Elements	1
Configuration	Single
Element Configuration	Single
Power Dissipation	700 W
Output Power	250 W
Rise Time	25 ns
Drain to Source Voltage (Vdss)	75 V
Continuous Drain Current (ID)	300 mA
Gate to Source Voltage (Vgs)	22 V
Gain	13 dB
Max Frequency	1.215 GHz
Max Output Power	250 W
Drain to Source Breakdown Voltage	75 V
Channel Type	N
Drain to Source Resistance	60 mΩ
Mode of Operation	Class AB
Test Voltage	36 V
Voltage Rating	75 V
RoHS Status	Supplier Unconfirmed
Lead Free	Lead Free