BLC8G27LS-140AVJ

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BLC8G27LS-140AVJ

Manufacturer part number:BLC8G27LS-140AVJ

Manufacturer:NXP Semiconductors

Description:BLC8G27LS-140AVJ datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLC8G27LS-140AVJ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum Gate Threshold Voltage (V)	2.3
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	140
Maximum IDSS (uA)	1.4
Maximum Drain Source Resistance (mOhm)	[email protected]
Typical Forward Transconductance (S)	0.97
Output Power (W)	140
Typical Power Gain (dB)	14.5
Maximum Frequency (MHz)	2690
Minimum Frequency (MHz)	2496
Typical Drain Efficiency (%)	42
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
Supplier Package	DFM
Military	No
Mounting	Surface Mount
Package Height	4.01(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	7
Part Status	Active
Pin Count	7
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	1-Carrier W-CDMA
RoHS Status	RoHS Compliant