BLF6G20-45

new-10%

Manufacturer part number:BLF6G20-45

Manufacturer:NXP Semiconductors

Description:BLF6G20-45 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLF6G20-45 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Continuous Drain Current (A)	13
Maximum Drain Source Resistance (mOhm)	200(Typ)@6.15V
Typical Forward Transconductance (S)	5
Output Power (W)	2.5(Typ)
Typical Power Gain (dB)	19.2
Maximum Frequency (MHz)	2000
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	14
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	225
AEC Qualified	Unknown
Supplier Package	CDFM
Military	No
Mounting	Screw
Package Height	4.62(Max)
Package Length	20.45(Max)
Package Width	10.29(Max)
PCB changed	3
Package Shape	RECTANGULAR
Manufacturer	NXP Semiconductors
Pbfree Code	Yes
Part Status	Obsolete
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-CDFM-F2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
DS Breakdown Voltage-Min	65 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	L BAND
Mode of Operation	2-Carrier W-CDMA
RoHS Status	RoHS Compliant