BLF6G27LS-75,118

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BLF6G27LS-75,118

Manufacturer part number:BLF6G27LS-75,118

Manufacturer:NXP Semiconductors

Description:BLF6G27LS-75,118 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLF6G27LS-75,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Number of Pins	3
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Continuous Drain Current (A)	18
Maximum Drain Source Resistance (mOhm)	[email protected]
Typical Reverse Transfer Capacitance @ Vds (pF)	1.6@28V
Typical Forward Transconductance (S)	7
Output Power (W)	75(Typ)
Typical Power Gain (dB)	17
Maximum Frequency (MHz)	2700
Minimum Frequency (MHz)	2500
Typical Drain Efficiency (%)	23
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Standard Package Name	SOT
Supplier Package	SOT-502B
Military	No
Mounting	Surface Mount
Package Height	4.72(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	3
Lead Shape	Flat
RoHS	Compliant
Packaging	Tape and Reel
Part Status	Obsolete
Max Operating Temperature	200 °C
Min Operating Temperature	-65 °C
Current Rating	18 A
Frequency	2.7 GHz
Pin Count	3
Number of Elements	1
Configuration	Single
Element Configuration	Single
Output Power	9 W
Test Current	600 mA
Drain to Source Voltage (Vdss)	65 V
Continuous Drain Current (ID)	18 A
Gate to Source Voltage (Vgs)	13 V
Gain	17 dB
Max Frequency	2.7 GHz
Max Output Power	75 W
Drain to Source Breakdown Voltage	65 V
Channel Type	N
Mode of Operation	1-Carrier N-CDMA
Test Voltage	28 V
Voltage Rating	65 V
RoHS Status	RoHS Compliant