BLU6H0410L-600P

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Manufacturer part number:BLU6H0410L-600P

Manufacturer:NXP Semiconductors

Description:BLU6H0410L-600P datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLU6H0410L-600P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	2
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	110
Maximum Gate Source Voltage (V)	11
Maximum Gate Threshold Voltage (V)	2.4
Maximum VSWR	40(Min)
Maximum Gate Source Leakage Current (nA)	280
Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	[email protected]
Typical Input Capacitance @ Vds (pF)	220@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	1.2@50V
Typical Output Capacitance @ Vds (pF)	74@50V
Output Power (W)	250(Min)
Typical Power Gain (dB)	21
Maximum Frequency (MHz)	900
Minimum Frequency (MHz)	400
Typical Drain Efficiency (%)	46
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Supplier Package	SOT-539A
Military	No
Mounting	Screw
Package Height	4.7(Max)
Package Length	41.28(Max)
Package Width	10.29(Max)
PCB changed	5
Part Status	Active
Pin Count	5
Configuration	Dual Common Source
Channel Type	N
Mode of Operation	Pulsed RF Class-AB
RoHS Status	RoHS Compliant