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BGD802

BGD802

BGD802

NXP Semiconductors / Freescale

WIDE BAND HIGH POWER Bulk 860MHz 6.5 dB

SOT-23

BGD802 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT-115
Packaging Bulk
Max Operating Temperature 100°C
Min Operating Temperature -20°C
Additional Feature LOW NOISE, HIGH RELIABILITY
Subcategory RF/Microwave Amplifiers
Technology HYBRID
Construction MODULE
Frequency 860MHz
Power Supplies 24V
Number of Channels 1
Test Frequency 860MHz
Nominal Supply Current 410mA
RF/Microwave Device Type WIDE BAND HIGH POWER
Characteristic Impedance 75Ohm
Noise Figure 6.5 dB
RoHS Status RoHS Compliant
Lead Free Lead Free
BGD802 Product Details

BGD802 Overview


It has a single WIDE BAND HIGH POWER RF/Microwave device type, making it a cost-effective RF amplifier.In order to provide high reliability, advanced RF Amp' packaging Bulk is used.Shipping overseas is convenient since the RF power Amplifier is packed in SOT-115.Here are some additional features of this RF Amp: LOW NOISE, HIGH RELIABILITYThere is a particular type of RF/Microwave Amplifiers in RF Amplifier.There should be 100°C more than 100°C degrees Celsius in the RF power Amplifier.

BGD802 Features


WIDE BAND HIGH POWER RF/Microwave Amplifier


BGD802 Applications


There are a lot of NXP Semiconductors / Freescale
BGD802 RF Amplifiers applications.


  • Notebook PC
  • Ultra-Mobile PC
  • Recreational
  • Marine Navigation
  • Avionics
  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications

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