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BGD816L

BGD816L

BGD816L

NXP Semiconductors / Freescale

22 dB WIDE BAND HIGH POWER Bulk 870MHz

SOT-23

BGD816L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOT-115
Packaging Bulk
Additional Feature LOW NOISE, HIGH RELIABILITY
Subcategory RF/Microwave Amplifiers
Technology HYBRID
Number of Functions 1
Construction MODULE
Frequency 870MHz
Operating Temperature (Min) -20°C
Operating Supply Voltage 24V
Number of Channels 1
Test Frequency 870MHz
Nominal Supply Current 375mA
Gain 22 dB
RF/Microwave Device Type WIDE BAND HIGH POWER
Characteristic Impedance 75Ohm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.864779 $14.864779
10 $14.023376 $140.23376
100 $13.229600 $1322.96
500 $12.480756 $6240.378
1000 $11.774297 $11774.297
BGD816L Product Details

BGD816L Overview


An RF Amplifier with a cost-effective RF/Microwave device type of WIDE BAND HIGH POWER.Using advanced packaging techniques Bulk, high reliability is ensured.The RF power Amplifier has been packed in SOT-115 for convenient overseas shipping.RF Amp has the following additional features: LOW NOISE, HIGH RELIABILITY1 functions are available in total for the RF Amplifier.Specially, RF Amplifier corresponds to type RF/Microwave Amplifiers.

BGD816L Features


WIDE BAND HIGH POWER RF/Microwave Amplifier


BGD816L Applications


There are a lot of NXP Semiconductors / Freescale
BGD816L RF Amplifiers applications.


  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure
  • Automated test equipment
  • RF/IF gain control
  • Microwave Radios

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