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A2I25D025GNR1

A2I25D025GNR1

A2I25D025GNR1

NXP USA Inc.

A2I25D025GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

A2I25D025GNR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-270-17 Variant, Gull Wing
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 65V
HTS Code 8542.33.00.01
Peak Reflow Temperature (Cel) 260
Frequency 2.69GHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 59mA
Transistor Type LDMOS (Dual)
Gain 31.9dB
Power - Output 3.2W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $29.74066 $14870.33
A2I25D025GNR1 Product Details

A2I25D025GNR1 Description


The A2I25D025GNR1 wideband integrated circuit has on-chip matching built in, allowing it to operate between 2100 and 2900 MHz. This multi-stage construction can accommodate all common modulation formats used by cellular base stations and is rated for 26 to 32 V operation.



A2I25D025GNR1 Features


  • At-Chip Matching (50 Ohm Input, DC Blocked)

  • Compensated for Integrated Quiescent Current Temperature

  • Activate/Deactivate Function

  • Created for Doherty Applications Designed for Digital Predistortion Error Correction Systems



A2I25D025GNR1 Applications


Switching applications


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