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A2I25H060GNR1

A2I25H060GNR1

A2I25H060GNR1

NXP USA Inc.

A2I25H060GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

A2I25H060GNR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-270-17 Variant, Gull Wing
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Reach Compliance Code not_compliant
Frequency 2.59GHz
Current - Test 26mA
Transistor Type LDMOS (Dual)
Gain 26.1dB
Power - Output 10.5W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $268.207280 $268.20728
10 $253.025736 $2530.25736
100 $238.703524 $23870.3524
500 $225.192004 $112596.002
1000 $212.445287 $212445.287
A2I25H060GNR1 Product Details

A2I25H060GNR1 Description


Asymmetrical Doherty developed with chip-mapping technology, the A2I25H060GNR1 wideband integrated circuit can operate between 2.3 MHz and 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and supports all popular cellular base station modulation formats.



A2I25H060GNR1 Features


  • Doherty High Performance Advanced In-Package

  • Matching on-Chip (DC Blocked, 50 Ohm Input)

  • Integrated Quiescent Current Temperature Compensation and the Enable/Disable Function (2)

  • Digital Predistortion Error Correction Systems incorporate this technology



A2I25H060GNR1 Applications


Switching applications


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