A2I25H060NR1

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Manufacturer part number:A2I25H060NR1

Manufacturer:NXP USA Inc.

Description:A2I25H060NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:A2I25H060NR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	TO-270-17 Variant, Flat Leads
Packaging	Tape & Reel (TR)
Published	2009
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Voltage - Rated	65V
Frequency	2.59GHz
Current - Test	26mA
Transistor Type	LDMOS (Dual)
Gain	26.1dB
Power - Output	10.5W
Voltage - Test	28V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$52.794303	$52.794303
10	$49.805947	$498.05947
100	$46.986742	$4698.6742
500	$44.327116	$22163.558
1000	$41.818033	$41818.033

A2I25H060NR1 Description

The A2I25H060NR1 wideband integrated circuit is an asymmetrical Doherty designed with chip-mapping technology that makes it usable from 2.3 MHz to 2690 MHz. This multi-stage structure supports all common cellular base station modulation formats and is rated for 20 to 32 V operation.

A2I25H060NR1 Features

Doherty Advanced High Performance In-Package
On-Chip Matching (DC Blocked, 50 Ohm Input)
Enable/Disable Function (2) and Integrated Quiescent Current Temperature Compensation
Incorporated into Digital Predistortion Error Correction Systems