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A2T07D160W04SR3

A2T07D160W04SR3

A2T07D160W04SR3

NXP USA Inc.

A2T07D160W04SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

A2T07D160W04SR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI-780S-4
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 70V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 803MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 450mA
Transistor Type LDMOS (Dual)
Gain 21.5dB
Power - Output 30W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $101.51320 $25378.3
A2T07D160W04SR3 Product Details

A2T07D160W04SR3 Description


For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz, this 30 W symmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.



A2T07D160W04SR3 Features


  • Wide Instantaneous Bandwidth Applications Designed

  • Improved Class C Operation with a Wider Negative Gate—Source Voltage Range

  • Capable of Withstanding Broadband Operating Conditions and Extremely High Output VSWR

  • For use with Digital Predistortion Error Correction Systems

  • in reel-to-reel. 250 Units, 32 mm Tape Width, 13-inch Reel; R3 Suffix.



A2T07D160W04SR3 Applications


Switching applications


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