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AFIC31025NR1

AFIC31025NR1

AFIC31025NR1

NXP USA Inc.

AFIC31025NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFIC31025NR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-270-17 Variant, Flat Leads
Packaging Tape & Reel (TR)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 32V
Frequency 2.7GHz~3.1GHz
Transistor Type LDMOS
Gain 30dB
RF/Microwave Device Type NARROW BAND HIGH POWER
Power - Output 25W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $38.02564 $19012.82
AFIC31025NR1 Product Details

AFIC31025NR1 Description


The AFIC31025N integrated circuit has on-chip matching built in, allowing it to operate between 2400 and 3100 MHz. CW and pulse applications are supported by this multi-stage device.



AFIC31025NR1 Features


  • Matching using a chip (50 ohm input, DC blocked)

  • Built-in temperature correction for quiescent current with an enable/disable function

  • Capable of performing up to 32 VDD operations.

  • Integrated ESD defense



AFIC31025NR1 Applications


  • Radar in the civil s-band

  • Radar for weather and radar for shipping

  • Commercial heating

  • Links to data

  • Plasma production


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