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AFT05MS003NT1

AFT05MS003NT1

AFT05MS003NT1

NXP USA Inc.

AFT05MS003NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT05MS003NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-243AA
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 30V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 520MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS
Gain 20.8dB
Power - Output 3W
Voltage - Test 7.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.97489 $1.97489
2,000 $1.89110 $3.7822
AFT05MS003NT1 Product Details

AFT05MS003NT1 Description

 

AFT05MS003NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS003NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS003NT1 has the common source configuration.

 

 

AFT05MS003NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT05MS003NT1 Applications

 

ISM applications

DC large signal applications

 


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