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AFT09MS007NT1

  • AFT09MS007NT1
  • AFT09MS007NT1

AFT09MS007NT1

AFT09MS007NT1

NXP USA Inc.

AFT09MS007NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT09MS007NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 30V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 870MHz
[email protected] Reflow Temperature-Max (s) 40
Operating Temperature (Max) 150°C
Configuration Single
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15.2dB
Power - Output 7.3W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 182W
Voltage - Test 7.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $2.10140 $2.1014
2,000 $1.99633 $3.99266
AFT09MS007NT1 Product Details

AFT09MS007NT1 Description

 

AFT09MS007NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes AFT09MS007NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS007NT1 has the common source configuration.

 

 

AFT09MS007NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT09MS007NT1 Applications

 

ISM applications

DC large signal applications


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