AFT21S230SR3 Description

These 50 W RF power LDMOS transistors are intended for use in cellular base station applications operating in the 2110 to 2170 MHz frequency range. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. This product can be applied in a variety of circumstances and is meant for general use.

AFT21S230SR3 Features

• Improved Class C Operation through Extended Negative Gate-Source Voltage Range

• Incorporated into Digital Predistortion Error Correction Systems

• Designed with Doherty Applications in Mind

• R3 Suffix = 250 Units, 44 mm Tape Width, NI—780S—2L2L, NI—780S—2L4S thirteen-inch reel

• R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel, NI—780S—2L. See page 17 for possibilities for R5 Tape and Reels.

AFT21S230SR3 Applications

Switching applications