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AFT27S006NT1

AFT27S006NT1

AFT27S006NT1

NXP USA Inc.

AFT27S006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT27S006NT1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Frequency 2.17GHz
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDFM-F2
Operating Temperature (Max) 150°C
Operating Temperature (Min) -40°C
Number of Elements 1
Configuration Single
Operating Mode ENHANCEMENT MODE
Current - Test 70mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 22dB
Power - Output 28.8dBm
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Power Dissipation Ambient-Max 1.5W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $5.64489 $5.64489
AFT27S006NT1 Product Details

AFT27S006NT1 Description

 

AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration.

 

 

AFT27S006NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT27S006NT1 Applications

 

ISM applications

DC large signal applications


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