AFT27S006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
AFT27S006NT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5W
Surface Mount
YES
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
65V
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
2.17GHz
[email protected] Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDFM-F2
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-40°C
Number of Elements
1
Configuration
Single
Operating Mode
ENHANCEMENT MODE
Current - Test
70mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
22dB
Power - Output
28.8dBm
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
Power Dissipation Ambient-Max
1.5W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$5.64489
$5.64489
AFT27S006NT1 Product Details
AFT27S006NT1 Description
AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration.