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AFV121KHSR5

  • AFV121KHSR5
  • AFV121KHSR5

AFV121KHSR5

AFV121KHSR5

NXP USA Inc.

BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MH , 1000 W PEAK, 50 V

SOT-23

AFV121KHSR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI-1230-4S
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 112V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 960MHz~1.22GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 19.6dB
Power - Output 1000W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $523.59440 $26179.72

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