BAP50-04W,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP50-04W,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Package / Case
SC-70, SOT-323
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAP50-04
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Power Dissipation-Max
240mW
Diode Type
PIN - 1 Pair Series Connection
Current - Max
50mA
Capacitance @ Vr, F
0.5pF @ 5V 1MHz
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
Diode Capacitance-Nom
0.45pF
Resistance @ If, F
5Ohm @ 10mA 100MHz
Diode Capacitance-Max
0.6pF
Minority Carrier Lifetime-Nom
1.05 µs
Diode Res Test Current
0.5mA
Diode Res Test Frequency
100MHz
Diode Forward Resistance-Max
5Ohm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.167590
$0.16759
10
$0.158104
$1.58104
100
$0.149155
$14.9155
500
$0.140712
$70.356
1000
$0.132747
$132.747
BAP50-04W,115 Product Details
BAP50-04W,115 Overview
This device is designed to operate from the maximal current of 50mA.The maximum reverse voltage of this device is in accordance with its applicable specifications.On occasion, this device can run at its lowest breakdown voltage of 50V.
BAP50-04W,115 Features
from a maximum current of 50mA volts at its lowest breakdown voltage of 50V
BAP50-04W,115 Applications
There are a lot of NXP USA Inc. BAP50-04W,115 applications of RF diodes.