BAP51L,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP51L,315 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
SOD-882
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN
HTS Code
8541.10.00.80
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAP51
Pin Count
2
JESD-30 Code
R-PBCC-N2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
500mW
Diode Type
PIN - Single
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V 1MHz
Voltage - Peak Reverse (Max)
60V
Breakdown Voltage-Min
60V
Frequency Band
S B
Resistance @ If, F
1.5Ohm @ 100mA 100MHz
Diode Capacitance-Max
0.4pF
Minority Carrier Lifetime-Nom
0.55 µs
RoHS Status
ROHS3 Compliant
BAP51L,315 Product Details
BAP51L,315 Overview
Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.A maximum reverse voltage of 60V is specified in the applicable device specifications.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 60V.
BAP51L,315 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 60V
BAP51L,315 Applications
There are a lot of NXP USA Inc. BAP51L,315 applications of RF diodes.