BAP55L,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP55L,315 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Package / Case
SOD-882
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN
HTS Code
8541.10.00.80
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAP55
Pin Count
2
JESD-30 Code
R-PBCC-N2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
500mW
Diode Type
PIN - Single
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.28pF @ 20V 1MHz
Voltage - Peak Reverse (Max)
50V
Source Url Status Check Date
2013-10-15 00:00:00
Frequency Band
S B
Resistance @ If, F
700mOhm @ 100mA 100MHz
Diode Capacitance-Max
0.28pF
Minority Carrier Lifetime-Nom
0.28 µs
Diode Forward Resistance-Max
0.7Ohm
RoHS Status
ROHS3 Compliant
BAP55L,315 Product Details
BAP55L,315 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.This device operates at a maximum reverse voltage of 50V based on the applicable device specifications.
BAP55L,315 Features
from a maximum current of 100mA volts
BAP55L,315 Applications
There are a lot of NXP USA Inc. BAP55L,315 applications of RF diodes.
Modulators
Surface-mount band-switching circuits
Series diode for mobile communication transmit/receive switch
Ultra high-speed switching
Clamping circuits
RF attenuators
Radar systems for industrial use
(SAT) TV
General-purpose Voltage Controlled Attenuators for high linearity applications