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BAP55LX,315

BAP55LX,315

BAP55LX,315

NXP USA Inc.

BAP55LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BAP55LX,315 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Package / Case 2-XDFN
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP55
Pin Count 2
JESD-30 Code R-PDSO-N2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 135mW
Diode Type PIN - Single
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.28pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 20V
Frequency Band S B
Diode Capacitance-Nom 0.28pF
Resistance @ If, F 800mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.28pF
Minority Carrier Lifetime-Nom 0.27 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 4.5Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.387889 $0.387889
10 $0.365933 $3.65933
100 $0.345220 $34.522
500 $0.325679 $162.8395
1000 $0.307244 $307.244
BAP55LX,315 Product Details

BAP55LX,315 Overview


A maximum current of 100mA is required to operate this device.This device operates at a maximum peak reverse voltage of 50V according to its specifications.This device may operate at its lowest breakdown voltage of 50V on occasion.Valid conversion results require a reverse test voltage within 20V.

BAP55LX,315 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V

BAP55LX,315 Applications


There are a lot of NXP USA Inc. BAP55LX,315 applications of RF diodes.

  • Compensators
  • Laptop and desktop PCs
  • Low loss band-switching in VHF television tuners
  • Low diode forward resistance
  • General-purpose Voltage Controlled Attenuators for high linearity applications
  • Broadband system applications i.e. WCDMA, CATV, etc.
  • Band switching
  • Surface-mount band-switching circuits
  • Telematic systems
  • Clamping circuits

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